Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-08
2007-05-08
Zarneke, David (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257SE21663, C257SE27104, C257SE29164
Reexamination Certificate
active
11241959
ABSTRACT:
A ferroelectric thin film formed of a highly oriented polycrystal in which 180° domains and 90° domains arrange at a constant angle to an applied electric field direction in a thin film plane and reversely rotate in a predetermined electric field.
REFERENCES:
patent: 5426075 (1995-06-01), Perino et al.
patent: 6093338 (2000-07-01), Tani et al.
patent: 6396094 (2002-05-01), Mirkarimi et al.
patent: 6440591 (2002-08-01), Matsunaga et al.
patent: 6737690 (2004-05-01), Higuchi et al.
patent: 6974985 (2005-12-01), Kurasawa et al.
patent: 7033001 (2006-04-01), Fujii et al.
patent: 2001/0013311 (2001-08-01), Migita et al.
patent: 2002/0102791 (2002-08-01), Kurasawa et al.
patent: 2002/0155667 (2002-10-01), Higuchi et al.
patent: 2003/0227803 (2003-12-01), Natori et al.
Hamada Yasuaki
Kijima Takeshi
Natori Eiji
Anya Igwe U.
Zarneke David
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