Ferroelectric thin film, ferroelectric thin film covering substr

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428446, 428697, 428699, 428700, 428701, 428702, 428325, B32B 1700

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058111816

ABSTRACT:
A close a-axis orientating film having a smooth surface and excellent ferroelectric characteristics is manufactured at a low temperature with preferable reproducibility to apply ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 to development of various kinds of devices such as a ferroelectric non-volatile memory, a pyroelectric sensor, etc. A ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 thin film is formed on a substrate through a titanium oxide buffer layer so that closeness and surface smoothness of the Bi.sub.4 Ti.sub.3 O.sub.12 thin film manufactured on the titanium oxide buffer layer can be improved.

REFERENCES:
patent: 5423285 (1995-06-01), Paz de Araujo
Si et al., "Ferroelectric bismuth titanate . . . vapor deposition", Journal of Applied Physics, vol. 73, No. 11, Jun. 1, 1993, pp. 7910-7913.
Mihara et al., "Feasibility for memory . . . fatigue free capacitors", pp. 137-157.
Katayama et al., "Effects of Growth Rate . . . Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 32 (1993) pp. 5062-5066 Part 1, No. 11A, Nov. 1993.
Sakashita et al., "Dependence of electrical . . . chemical vapor deposition", Journal of Applied Physics, vol. 73, No. 11, Jun. 1, 1993, pp. 7857-7863.

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