Ferroelectric thin film element with (III) orientation

Details Ferroelectric thin film element with (III) orientation Ferroelectric thin film element with (III) orientation

1993-02-22

1994-07-19

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257627, 257771, 257766, 365145, H01L 2904, H01L 2348

Patent

active

053311876

ABSTRACT:
A ferroelectric thin film element constructed by forming a first electrode composed of an alloy thin film of a Ni-Cr-Al system or Ni-Al system on a substrate and forming a ferroelectric thin film composed of a ferroelectric material having a composition having a spontaneous axis in the direction (111) and having a crystal orientation in the direction (111) on the first electrode composed of a thin film.

REFERENCES:
patent: 3586415 (1971-06-01), Kumda
patent: 4888630 (1989-12-01), Paterson
patent: 5088002 (1992-02-01), Ogawa
patent: 5189594 (1993-02-01), Hoshiba
patent: 5227855 (1993-07-01), Momose

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