Ferroelectric thin film element

Details Ferroelectric thin film element Ferroelectric thin film element

1993-03-30

1995-09-12

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 64, 257 65, 257627, 257761, 365109, 365117, H01L 2904, H01L 2722, H01L 2348

Patent

active

054499330

ABSTRACT:
A ferroelectric thin film element 1 constructed by forming a MgO thin film 3 oriented in the direction (100), a lower electrode 4 composed of an alloy thin film of a Ni--Cr--Al system oriented in the direction (100), a ferroelectric thin film 5 composed of a PbTiO.sub.3 thin film oriented in the direction (111), and an upper electrode 6 in this order on a substrate composed of (100) silicon 2.

REFERENCES:
patent: 5088002 (1992-02-01), Ogawa
Kidoh et al., "Ferroelectric properties of Pb-Zr-Ti films prepared by laser ablation", Appl. Phys. Lett., 58(25), 24 Jun. 1991, pp. 2910-2912.

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