Compositions – Fluent dielectric – N-containing
Patent
1996-05-08
1998-05-26
Fahmy, Wail
Compositions
Fluent dielectric
N-containing
257295, 257296, 257303, 257306, 257310, H01L 2900, H01L 2976, H01L 2994, H01L 31062
Patent
active
057570612
ABSTRACT:
A ferroelectric thin film coated substrate is obtained by a producing method of forming a crystalline thin film on a substrate by means of a MOCVD method at a substrate temperature at which crystal grows and of forming a ferroelectric thin film on the crystalline thin film by means of the MOCVD method at a film forming temperature, which is lower than the film forming temperature of the crystalline thin film. This producing method makes it possible to produce a ferroelectric thin film, where a surface of the thin film is dense and even, leakage current properties are excellent and sufficiently large remanent spontaneous polarization is shown, at a lower temperature.
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Kijima Takeshi
Koba Masayoshi
Matsunaga Hironori
Satoh Sakiko
Fahmy Wail
Sharp Kabushiki Kaisha
Weiss Howard
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