Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-10-11
1999-11-23
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419218, 2041982, C23C 1434
Patent
active
059893958
ABSTRACT:
A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, [(1-x).Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.MgO], where x=0.01.about.0.10 and y=0.05.about.0.25 can be manufactured.
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Fujii Eiji
Fujii Satoru
Fujii Satoshi
Kobune Masafumi
Takayama Ryoichi
Matsushita Electric - Industrial Co., Ltd.
Nguyen Nam
Ver Steeg Steven H.
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