Ferroelectric thin film and method for forming the same

Coating processes – Heat decomposition of applied coating or base material

Reexamination Certificate

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Reexamination Certificate

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10704745

ABSTRACT:
A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.

REFERENCES:
patent: 4759823 (1988-07-01), Asselanis et al.
patent: 5721009 (1998-02-01), Dougherty et al.
patent: 2002/0115307 (2002-08-01), Lee et al.
patent: 1 388 555 (2003-08-01), None
patent: 02/32809 (2002-04-01), None
McGraw Hill Encyclopedia of Science and Technology, vol. 16, 1997, pp. 649-651.
Kijima et al.*, Jpn. J. Appl. Phys. 41(Pt. 2, No. 10B):L1164-L1166 (2002).
*Entitled: “Effect of High-Pressure Oxygen Annealing on Bi2SiO5—Added Ferroelectric Thin Films”.
Kijima et al.** , Jpn. J. Appl. Phys, 41 (Pt.2, No. 6B):L-716-L719 (2002).
**Entitled: Si-Substituted Ultrathin Ferroelectric Films.
Kijima, Takeshi, et al., *, FERROELECTRICS, vol. 271, pp. 289-295 (Jun. 15, 2002).
*Entitled: “Ultra-thin Ferroelectric Films Modified by Bi2SiO5”.

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