Ferroelectric storage device

Details Ferroelectric storage device Ferroelectric storage device

2006-01-31

2006-01-31

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

06992913

ABSTRACT:
In the present invention, a polarization having a lower polarization level than a saturation polarization is caused in a ferroelectric capacitor by applying a voltage that is lower than a saturation voltage to the ferroelectric capacitor. This allows a storage device to store many values by changing a length of a write-time during which the voltage is applied to the capacitor.

REFERENCES:
patent: 5325050 (1994-06-01), Sameshima
patent: 5434811 (1995-07-01), Evans et al.
patent: 5541870 (1996-07-01), Mihara et al.
patent: 6707702 (2004-03-01), Komatsuzaki
patent: 2005/0180220 (2005-08-01), Chen et al.
patent: 2001-308291 (2001-11-01), None

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