Ferroelectric storage device

Details Ferroelectric storage device Ferroelectric storage device

1998-05-11

1999-12-07

Hoang, Huan

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 36518907, G11C 1122

Patent

active

05999438&

ABSTRACT:
A ferroelectric storage device enabling an increase of capacity without a major increase in the chip size by use of multi-level data. At the time of a write operation, one of four types of potential based on the 2 bits of data input to the I/O terminal is selectively supplied from a potential generator to a bit line through a data line. The potential is supplied to one of the electrodes of a ferroelectric capacitor where one of four types of residual polarization states is selectively produced at the ferroelectric. By this, 4-level data is stored in a single memory cell. At the time of a read operation, the potential of the bit line is compared with three reference potentials at an output data generator to discriminate the stored data.

REFERENCES:
patent: 5640030 (1997-06-01), Kenney

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