Ferroelectric semiconductor storage device

Details Ferroelectric semiconductor storage device Ferroelectric semiconductor storage device

2008-02-06

2010-11-09

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S049130, C365S065000, C365S066000, C365S102000, C365S109000, C365S117000, C365S138000, C365S149000, C365S230030

Reexamination Certificate

active

07830696

ABSTRACT:
A ferroelectric semiconductor storage device includes: a block having a plurality of ferroelectric memory cells connected in series, each of the plurality of ferroelectric memory cells including a ferroelectric capacitor and a transistor connected in parallel to both ends of the ferroelectric capacitor; a word line connected to each of the transistors; a selection transistor connected to one end of the block; a bit line connected to the selection transistor; and a plate line connected to the other end of the block. The number of ferroelectric memory cells connected in each block in the ferroelectric semiconductor storage device is odd.

REFERENCES:
patent: 7099178 (2006-08-01), Shiratake
patent: 7138674 (2006-11-01), Shiga et al.
patent: 7646623 (2010-01-01), Koide
patent: 2005/0122764 (2005-06-01), Takashima
patent: 2006/0193162 (2006-08-01), Ogiwara et al.
A 32-MB Chain FeAM with Segment/Stitch Array Architecture, Shiratake et al., Nov. 2003, IEEE Journal of Solid State Circuits, vol. 38, No. 11, all pages pertinent.
U.S. Appl. No. 12/263,820, filed Nov. 3, 2008, Shiratake.

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