Ferroelectric semiconductor memory and accessing method therefor

Details Ferroelectric semiconductor memory and accessing method therefor Ferroelectric semiconductor memory and accessing method therefor

1996-09-30

1998-09-08

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365117, G11C 1122, G11C 1124

Patent

active

058054952

ABSTRACT:
In a memory cell composed of a ferroelectric capacitor, a binary data is stored in a dielectric component, and another binary data is stored in a ferroelectric component. Therefore, it is possible to store a binary data in one memory cell in each of a DRAM mode and an FRAM mode, with the result that two items of binary data or one item of quaternary data can be stored. Thus, a double memory capacity can be realized with the same cell size, and accordingly, it is possible to realize a high memory capacity without increasing the cell size of the semiconductor memory.

REFERENCES:
patent: 5383150 (1995-01-01), Nakamura et al.
patent: 5525528 (1996-06-01), Perino et al.
patent: 5572459 (1996-11-01), Wilson et al.
patent: 5579257 (1996-11-01), Tai
patent: 5621680 (1997-04-01), Newman et al.
T. Sumi et al., "A 256kb Nonvolatile Ferroelectric Memory at 3V and 100ns", 1994 IEEE International Solid-State Circuits Conference, 1994, pp. 268-269.
H. Koike et al., "A 60ns 1Mb Nonvolatile Ferroelectric Memory with Non-driven Cell Plate Line Write/Read Scheme", 1996 IEEE International Solid-State Circuits Conference, 1996, pp.368-369.
S. Fujii et al., "A 50 .mu.A Standby 1MW.times.1b/256KW.times.4b CMOS DRAM", 1986 IEEE International Solid-State Circuits Conference, 1986, pp. 266-267 and 368.

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