Ferroelectric recording medium and writing method for the same

Details Ferroelectric recording medium and writing method for the same Ferroelectric recording medium and writing method for the same

2006-02-07

2010-10-26

Ruthkosky, Mark (Department: 1785)

Stock material or miscellaneous articles

Magnetic recording component or stock

Thin film media

C257S295000, C257S288000

Reexamination Certificate

active

07820311

ABSTRACT:
A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

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