Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2011-03-01
2011-03-01
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S104000, C438S239000, C438S240000, C438S244000, C438S385000, C257SE21008, C257SE21009, C257SE21663, C257SE21664, C257SE21665
Reexamination Certificate
active
07897415
ABSTRACT:
Provided are a ferroelectric recording medium and a method of manufacturing the same. The ferroelectric recording medium includes a substrate, a plurality of supporting layers which are formed on the substrate, each of the supporting layers having at least two lateral surfaces; and data recording layers formed on the lateral surfaces of the supporting layers. First and second data recording layers may be respectively disposed on two facing lateral surfaces of each of the supporting layers. The supporting layers may be polygonal pillars having at least three lateral surfaces. A plurality of the supporting layers can be disposed at uniform intervals in a two-dimensional array.
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Buehlmann Simon
Hong Seung-bum
Ahmadi Mohsen
Garber Charles D
Samsung Electronics Co,. Ltd.
Sughrue & Mion, PLLC
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