Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-31
2007-07-31
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S036000, C257S037000, C257S038000, C257S039000
Reexamination Certificate
active
10934773
ABSTRACT:
Ferroelectric rare-earth manganese-titanium oxides and methods of their manufacture. The ferroelectric materials can provide nonvolatile data storage in rapid access memory devices.
REFERENCES:
patent: 5418389 (1995-05-01), Watanabe
patent: 6376090 (2002-04-01), Kijima
patent: 6610548 (2003-08-01), Ami et al.
patent: 6740261 (2004-05-01), Ogata et al.
patent: 2003/0173601 (2003-09-01), Machida et al.
Kim Dae-sig
Li Yi-Qun
Wang Ning
Xue Qizhen
Yoo Young
Baker Gary
Intematix Corporation
Quine Intellectual Property Law Group P.C.
Tran Tan
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