Ferroelectric rare-earth manganese-titanium oxides

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S296000, C257S036000, C257S037000, C257S038000, C257S039000

Reexamination Certificate

active

10934773

ABSTRACT:
Ferroelectric rare-earth manganese-titanium oxides and methods of their manufacture. The ferroelectric materials can provide nonvolatile data storage in rapid access memory devices.

REFERENCES:
patent: 5418389 (1995-05-01), Watanabe
patent: 6376090 (2002-04-01), Kijima
patent: 6610548 (2003-08-01), Ami et al.
patent: 6740261 (2004-05-01), Ogata et al.
patent: 2003/0173601 (2003-09-01), Machida et al.

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