Ferroelectric random access memory device including shared bit l

Details Ferroelectric random access memory device including shared bit l Ferroelectric random access memory device including shared bit l

1999-06-17

2000-10-24

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

365 65, G11C 1122

Patent

active

061377112

ABSTRACT:
A ferroelectric random access memory ("FeRAM") device includes shared bit lines and fragmented plate lines. Each bit line is shared by a group of two or more ferroelectric capacitors. Each group also includes at least one access transistor, which may be shared by more than one ferroelectric capacitor. During read and write operations, capacitors in a group are selected by the plate lines and a plate line decoder.

REFERENCES:
patent: 5400275 (1995-03-01), Abe et al.
patent: 5524093 (1996-06-01), Kuroda

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