Ferroelectric random access memory device including active read/

Details Ferroelectric random access memory device including active read/ Ferroelectric random access memory device including active read/

1999-06-17

2000-05-09

Mai, Son

Static information storage and retrieval

Systems using particular element

Ferroelectric

36518905, 365205, G11C 1122

Patent

active

060612665

ABSTRACT:
A ferroelectric random access memory device ("FeRAM") includes an array of memory cells and a plurality of active read/write circuits for reading the memory cells. A memory cell is read by forcing its ferroelectric capacitor to a first polarization state and determining whether capacitor discharge exceeds a threshold. If the capacitor transitions from a second polarization state to the first polarization state, the capacitor discharge will exceed the threshold. If the threshold is exceeded, a logic value corresponding to the second polarization state is indicated, and the ferroelectric capacitor is restored to the second polarization state. If the ferroelectric capacitor does not transition from the first polarization state to the second polarization state (i.e., the capacitor remains in the first polarization state), capacitor discharge will not exceed the threshold. If the threshold is not exceeded, a logic value corresponding to the first polarization state is indicated.

REFERENCES:
patent: 5262982 (1993-11-01), Brassington et al.
patent: 5270967 (1993-12-01), Moazzami et al.
patent: 5406510 (1995-04-01), Mihara et al.
patent: 5835399 (1998-11-01), Jeon

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