Ferroelectric random access memory device, display drive IC...

Details Ferroelectric random access memory device, display drive IC... Ferroelectric random access memory device, display drive IC...

2006-06-16

2008-07-01

Le, Vu A (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

07394677

ABSTRACT:
A ferroelectric memory device being short in the bit line direction. The ferroelectric memory device is structured including a first word line extending in the first direction; a plurality of element regions arrayed in the first direction on both sides of the first word line; a plurality of ferroelectric capacitors connected to the respective element regions and driven by the first word line. Each of the element regions preferably has a stair-like shape when seen in a plane view and the first word line is preferably arranged bent between the element regions.

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patent: 6784468 (2004-08-01), Honda
patent: 6816410 (2004-11-01), Kleveland et al.
patent: 6882556 (2005-04-01), Fuhrmann et al.
patent: 2002-170935 (2002-06-01), None
patent: 2003-197869 (2003-07-01), None
patent: 10-2004-0012545 (2004-02-01), None

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