Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-11-06
2007-11-06
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S063000, C257S295000
Reexamination Certificate
active
11448530
ABSTRACT:
A ferroelectric random access memory device, includes at least one bit line extending in a first direction; a plurality of first active regions, arranged in the first direction a predetermined distance from each other on one side of the bit line, each being connected to the bit line and a first ferroelectric capacitor; and a plurality of second active regions, arranged in the first direction a predetermined distance from each other on the other side of the bit line, each being connected to the bit line and a second ferroelectric capacitor, the first active regions partly overlapping, in the first direction, the second active regions respectively neighboring the first active regions, and being arranged a predetermined distance from the respective neighboring second active regions in a second direction crossing the first direction.
REFERENCES:
patent: 4032903 (1977-06-01), Weimer
patent: 5422840 (1995-06-01), Naiki
patent: 6784468 (2004-08-01), Honda
patent: 7183595 (2007-02-01), Honda
patent: 2006/0039177 (2006-02-01), Fukada
patent: 2002-170935 (2002-06-01), None
Harness & Dickey & Pierce P.L.C.
Nguyen Tan T.
Seiko Epson Corporation
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