Ferroelectric random access memory device and method for...

Details Ferroelectric random access memory device and method for... Ferroelectric random access memory device and method for...

2005-05-10

2005-05-10

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27104

Reexamination Certificate

active

06891211

ABSTRACT:
The present invention is related to a ferroelectric memory device and a method for fabricating the same. The ferroelectric memory device includes: a substrate providing a transistor; a first insulation material with a plane surface formed on the substrate; a storage node contact passing through the first insulation material to contact to an active region of the substrate; a lower electrode being connected to the storage node contact and including a solid solution layer disposed at least as an upper most layer, the solid solution layer being doped with a metal element, which is induced to be in a solid solution state; a second insulation material having a plane surface that exposes a surface of the lower electrode, encompassing the lower electrode and being formed on the first insulation material; a ferroelectric layer covering the second insulation material including the lower electrode; an upper electrode formed on the ferroelectric layer.

REFERENCES:
patent: 6440754 (2002-08-01), Hayashi et al.
patent: 6479849 (2002-11-01), Katori
patent: 6541375 (2003-04-01), Hayashi et al.
patent: 1998-63820 (1998-10-01), None
patent: 2001-56098 (2001-07-01), None

Affiliated with

Also associated with

Rating

Ferroelectric random access memory device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric random access memory device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric random access memory device and method for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3418913