Ferroelectric random access memory device and control method...

Details Ferroelectric random access memory device and control method... Ferroelectric random access memory device and control method...

2006-07-11

2006-07-11

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S230060, C365S233500

Reexamination Certificate

active

07075812

ABSTRACT:
There are provided a ferroelectric RAM (Random Access Memory) device and a control method thereof. In the device, a data input buffer circuit senses a transition of input data and generates a data transition detection signal. Further, a plate pulse generator generates a single pulse to store first logic data among applied data at an enable section of a plate line, and to store second logic data opposite to the first logic data at a disable section of the plate line, where the single pulse enables the plate line connected to a memory cell in response to the data transition detection signal and then disables it after lapse of a given time. Thus, a stabilized write operation can be provided and a control of the ferroelectric RAM device can be simplified.

REFERENCES:
patent: 5650978 (1997-07-01), Ukita et al.
patent: 5907861 (1999-05-01), Seyyedy
patent: 6242940 (2001-06-01), Na
patent: 6967860 (2005-11-01), Choi et al.

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