Ferroelectric random access memory circuits for guarding...

Details Ferroelectric random access memory circuits for guarding... Ferroelectric random access memory circuits for guarding...

2008-05-20

2008-05-20

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189070, C365S210130, C365S230030

Reexamination Certificate

active

11378726

ABSTRACT:
A method of operating a ferroelectric random access memory (FRAM) can include reading a low-voltage FRAM monitoring memory array and preventing a read/write-back of an FRAM memory cell array if data read from the low-voltage FRAM monitoring memory array is corrupted.

REFERENCES:
patent: 6563729 (2003-05-01), Brucklmeier et al.
patent: 6704218 (2004-03-01), Rickes et al.
patent: 6850428 (2005-02-01), Kang
patent: 2004-095136 (2004-03-01), None
patent: 2004-355679 (2004-12-01), None
patent: 1020040020340 (2004-03-01), None

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