Ferroelectric random access memory

Details Ferroelectric random access memory Ferroelectric random access memory

2007-11-20

2007-11-20

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S145000

Reexamination Certificate

active

11347337

ABSTRACT:
A unit cell is composed of a memory cell transistor and a ferroelectric storage element connected in parallel between a source and a drain of the memory cell transistor. A memory cell block is composed of a plurality of unit cells connected in series. One end of the memory cell block is connected to a bit line via a block selecting transistor. The other end of the memory cell block is connected to a plate line. A redundancy unit cell is composed of a redundancy cell transistor and a ferroelectric storage element connected in parallel between a source and a drain of the redundancy cell transistor. A redundancy memory cell block is composed of a plurality of unit cells connected in series, the number of which is smaller than that of the unit cells in the memory cell block.

REFERENCES:
patent: 6507510 (2003-01-01), Takashima
patent: 6879529 (2005-04-01), Yamada
patent: 2002/0186600 (2002-12-01), Kang et al.
patent: 6-203594 (1994-07-01), None
patent: 10-255483 (1998-09-01), None
patent: 11-177036 (1999-07-01), None
patent: 2000-22010 (2000-01-01), None
patent: 2002-50192 (2002-02-01), None

Affiliated with

Also associated with

Rating

Ferroelectric random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3859833