Ferroelectric random access memory

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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C365S230030, C365S230060

Reexamination Certificate

active

06956760

ABSTRACT:
A ferroelectric random access memory (FeRAM) which can embody a high integration cell by sharing a plate line in sub cell array block units is provided. In a read operation mode, the FeRAM stores read data from a cell array block in a timing data register array unit through a common data bus unit, and in a write operation mode, the FeRAM stores read data stored in the timing data register array unit or data inputted from a timing data buffer unit in the cell array block through the common data bus unit.

REFERENCES:
patent: 6067244 (2000-05-01), Ma et al.
patent: 6272594 (2001-08-01), Gupta
patent: 6301145 (2001-10-01), Nishihara
patent: 6314016 (2001-11-01), Takasu
patent: 6363439 (2002-03-01), Battles et al.
patent: 6574135 (2003-06-01), Komatsuzaki
patent: 6771531 (2004-08-01), Nishihara
patent: 1020040059009 (2004-07-01), None

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