Ferroelectric RAM device

Static information storage and retrieval – Systems using particular element – Ferroelectric

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Details

365149, G11C 1122

Patent

active

060440082

ABSTRACT:
The present invention relates to a ferroelectric RAM device to solve the problem that, in case of using one reference voltage generator to bit lines in which a plurality of memory cells are arranged, electric charge is decreased according to the increase in the number of use of reference cell and the reference voltage is changed, resulting in it is difficult to secure the sensing margin.

REFERENCES:
patent: 5572459 (1996-11-01), Wilson et al.
patent: 5715190 (1998-02-01), Honjo et al.
patent: 5726930 (1998-03-01), Hasegawa et al.

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