Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1998-06-18
2000-03-28
Nelms, David
Static information storage and retrieval
Systems using particular element
Ferroelectric
365149, G11C 1122
Patent
active
060440082
ABSTRACT:
The present invention relates to a ferroelectric RAM device to solve the problem that, in case of using one reference voltage generator to bit lines in which a plurality of memory cells are arranged, electric charge is decreased according to the increase in the number of use of reference cell and the reference voltage is changed, resulting in it is difficult to secure the sensing margin.
REFERENCES:
patent: 5572459 (1996-11-01), Wilson et al.
patent: 5715190 (1998-02-01), Honjo et al.
patent: 5726930 (1998-03-01), Hasegawa et al.
Hyundai Electronics Industries Co,. Ltd.
Nelms David
Tran M.
LandOfFree
Ferroelectric RAM device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ferroelectric RAM device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric RAM device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1331692