Ferroelectric polymer memory module

Details Ferroelectric polymer memory module Ferroelectric polymer memory module

2004-09-27

2010-10-05

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21663, C257SE21664, C257SE27104, C438S003000

Reexamination Certificate

active

07808024

ABSTRACT:
A ferroelectric polymer memory module includes a first set of layers including: a first ILD layer defining trenches therein; a first electrode layer disposed in the trenches of the first ILD layer; a first conductive polymer layer disposed on the first electrode layer and in the trenches of the first ILD layer; and a ferroelectric polymer layer disposed on the first conductive polymer layer and in the trenches of the first ILD layer; and a second set of layers disposed on the first set of layers to define memory cells therewith, the second set of layers including: a second ILD layer defining trenches therein; a second conductive polymer layer disposed in the trenches of the second ILD layer; and a second electrode layer disposed on the second conductive polymer layer.

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Office Action from Korean Patent Application 2007-7006973 mailed Jan. 23, 2009, 6 pgs.
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