Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-25
2007-09-25
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S003000, C257SE21664, C257SE21208
Reexamination Certificate
active
11180744
ABSTRACT:
A ferroelectric/paraelectric multilayer thin film having a high tuning rate of a dielectric constant and small dielectric loss to overcome limitations of a tuning rate of a dielectric constant and dielectric loss of a ferroelectric thin film, a method of forming the same, and a high frequency variable device having the ferroelectric/paraelectric multilayer thin film are provided. The ferroelectric/paraelectric multilayer thin film includes a perovskite ABO3structure paraelectric seed layer formed on a substrate, and an epitaxial ferroelectric (BaxSr1-x)TiO3thin film formed on the paraelectric seed layer. The high frequency variable device can realize a RF frequency/phase variable device having a high speed, low power consumption, and low prices and excellent microwaves characteristics.
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B.H. Park, et al., J. Lee, X. Zeng, et al., Effects of very thin strain layers on dielectric properties of epitaxial Ba0.6Sr0.4TiO3films,Applied Physics Letters, vol. 78, No. 4, Jan. 22, 2001.
Kang Kwang Yong
Kwak Min Hwan
Lee Su Jae
Moon Seung Eon
Ryu Han Cheol
Blakely & Sokoloff, Taylor & Zafman
Electronics and Telecommunications Research Institute
Pert Evan
Sandvik Benjamin P.
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