Ferroelectric nonvolatile random access memory having drive line

Details Ferroelectric nonvolatile random access memory having drive line Ferroelectric nonvolatile random access memory having drive line

1993-07-06

1994-12-13

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365227, 365228, G11C 1122

Patent

active

053734637

ABSTRACT:
A nonvolatile random access memory (60) includes a ferroelectric memory array (62). The memory array (62) includes memory cells (86-89 and 91-96) arranged in intersecting rows and columns, where the memory cells (86-89 and 91-96) are coupled to bit lines and word lines. Drive lines are disposed parallel to the bit lines and drive line segments are disposed parallel to the word lines. A drive line segment is coupled to a predetermined number of the memory cells of a row. Coupling transistors (80, 82, 84, and 90) couple a drive line segment to a drive line in response to the word line being selected. The ferroelectric memory array (60) provides the advantage of eliminating a change in the polarization state of non-accessed memory cells connected to a selected drive line, and also provides the advantage of reduced energy consumption.

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Joseph T. Evans et al., "An Experimental 512-bit Nonvolatile Memory with Ferroelectric Storage Cell", IEEE Journal of Solid-State Circuits, vol. 23, No. 5, Oct. 1988, pp. 1171-1175.
David Bondurant et al., "Ferroelectrics for nonvolatile RAMs", IEEE Spectrum, Jul. 1989, pp. 30-33.

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