Ferroelectric nonvolatile memory element having capacitors of sa

Details Ferroelectric nonvolatile memory element having capacitors of sa Ferroelectric nonvolatile memory element having capacitors of sa

1998-06-19

2000-07-25

Tran, Andrew Q.

Static information storage and retrieval

Systems using particular element

Ferroelectric

326 44, 326 39, 257295, G11C 1122

Patent

active

060943696

ABSTRACT:
A nonvolatile memory element capable of using desired ferroelectric materials, exhibiting a high reliability and performing processings such as reading of information without destruction of stored contents is provided. A memory cell comprises two capacitors Cf1 and Cf2 connected to each other in series. Both capacitors are ferroelectric capacitors manufactured by the same steps. Accordingly, the coupling ratio between both capacitors can be changed by only the change of surface areas thereof. A voltage corresponding to the information to be stored is applied to the opposite ends of the memory cell 20 to cause polarization reversal and as a result, the information is written thereinto. In order to read the stored information, a ground potential is applied to the opposite ends of the memory cell 20. On the basis of the potential generated at a connection 20c upon the application of the ground potential, the information can be read.

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