Ferroelectric non-volatile memory device having integral...

Details Ferroelectric non-volatile memory device having integral... Ferroelectric non-volatile memory device having integral...

2005-05-24

2005-05-24

Le, Thong Q. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

06898105

ABSTRACT:
A ferroelectric non-volatile memory device that allows the coupling ratio to be increased and the effect of voltage distribution to the ferroelectric capacitor to be improved without increasing the area of the gate electrode of a detection MIS field effect transistor is provided. In a memory cell structure, a semiconductor including regions for a source, a channel, and a drain, a gate insulator on the channel region, a floating gate conductor, a ferroelectrics, and an upper electrode conductor are layered in this order. The structure includes a paraelectric capacitor having one end connected to the floating gate conductor and the other end connected to the source region.

REFERENCES:
patent: 07-202138 (1995-08-01), None
patent: 9-139472 (1997-05-01), None
patent: 10-064255 (1998-03-01), None
patent: 2800746 (1998-07-01), None
patent: 11-097559 (1999-04-01), None
patent: 2000-349251 (2000-12-01), None

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