Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-12-04
2007-12-04
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S222000, C365S205000, C365S210130, C365S189070, C365S189090
Reexamination Certificate
active
10880406
ABSTRACT:
Apparatus and methods are described for a multi-level FeRAM memory device. Using write and read circuits associated with the memory device, multiple data states may be written to and read from the ferroelectric memory device which are associated with a single polarization direction, thereby allowing for a single cell to contain more than one bit of data.
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European Search Report, Application No. 03103626.2, Texas Instruments Inc., 3 pgs.
Rodriguez John Anthony
Udayakumar Kezhakkedath R.
Brady III W. James
Garner Jacqueline J.
Nguyen Viet Q.
Telecky, Jr. Federick J.
Texas Instruments Incorporated
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