Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2009-05-22
2011-12-13
Hidalgo, Fernando N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S049120, C365S065000, C365S117000, C365S230030, C365S189150, C365S189160, C365S207000
Reexamination Certificate
active
08077494
ABSTRACT:
A memory capable of suppressing increase of a chip area thereof while preventing nonselected subarrays from disturbance is obtained. This memory comprises a first transistor for connecting respective sub bit lines with each other, and connects the sub bit lines of the nonselected subarrays with each other through the first transistor and connects the same to fixed potentials arranged on both ends of a memory cell array at least in a read operation.
REFERENCES:
patent: 6256245 (2001-07-01), Kwak
patent: 6845030 (2005-01-01), Kang et al.
patent: 6985374 (2006-01-01), Yamamura
patent: 7110279 (2006-09-01), Miyamoto et al.
patent: 7319606 (2008-01-01), Miyamoto
patent: 2003/0043538 (2003-03-01), Iwanari
patent: 2005/0141258 (2005-06-01), Kang et al.
patent: 2005/0207203 (2005-09-01), Kang
patent: 2001-222889 (2001-08-01), None
patent: 2004-220740 (2004-08-01), None
patent: 2005-108397 (2005-04-01), None
patent: 2005-285190 (2005-10-01), None
Office Action for CN App. 200710096661.9 issued Aug. 25, 2010.
Japanese Office Action, JP 2006-121425, Apr. 22, 2008, Japan.
Office Action, U.S. Appl. No. 11/739,754, mailed on Aug. 14, 2008.
Notice of Allowability, U.S. Appl. No. 11/739,754, mailed on Jan. 27, 2009.
Hidalgo Fernando N.
Patrenella Capital Ltd., LLC
Schwabe Williamson & Wyatt P.C.
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