Ferroelectric memory with non-destructive readout including grid

Details Ferroelectric memory with non-destructive readout including grid Ferroelectric memory with non-destructive readout including grid

1990-02-28

1991-07-09

Gossage, Glenn

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 357 236, 361301, 361321, G11C 1122

Patent

active

050311441

ABSTRACT:
A ferroelectric memory has a top electrode (12) a bottom electrode (14) and a grid electrode (18) having spaced conducting members located between the top electrode (12) and the bottom electrode (14). A ferroelectric material (16) is positioned between the top electrode and the bottom electrode. A dielectric material (20) is located immediately between the spaced coducting members of the grid electrode (18) and the top electrode (20). This forms ferroelectric fingers (22) which can be selectively polarized by applying a voltage between the top electrode and the grid electrode during reading of the memory cell (10). When the read operation is complete, the ferroelectric fingers (22) will spontaneously repolarize to the state of the rest of the continuous ferroelectric bulk (16). This results in a ferroelectric memory with nondestructive readout.

REFERENCES:
patent: 3681765 (1972-08-01), Chapman
patent: 4158201 (1979-06-01), Smith et al.
patent: 4358611 (1982-09-01), Ruppel et al.
patent: 4707897 (1987-11-01), Rohrer et al.
patent: 4853893 (1989-08-01), Eaton, Jr. et al.
"Ferroelectrics for Nonvolatile RAMs", IEEE Spectrum, Jul. 1989, David Bondurant and Fred Gnadinger, pp. 30-33.

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