Ferroelectric memory with increased switching voltage

Details Ferroelectric memory with increased switching voltage Ferroelectric memory with increased switching voltage

1998-11-02

2000-02-29

Phan, Trong

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365203, G11C 1122, G11C 700

Patent

active

06031754&

ABSTRACT:
A ferroelectric integrated circuit memory includes a memory cell having a ferroelectric capacitor, one electrode of which is connected to a bit line through a transistor, and the other electrode of which is connected to a plate line. The bit line is also connected to system ground through a precharge transistor. In a read cycle, the precharge transistor remains on after the word line goes high connecting the capacitor to the bit line. At least a portion of the linear displacement current that flows to the bit line is drained off to ground via the precharge transistor, thereby increasing the switching voltage across the ferroelectric capacitor. The precharge transistor is turned off before or during the switching of the ferroelectric capacitor. The signal applied to the gate of the precharge transistor is boosted above the supply voltage of the memory to shorten the cycle time.

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patent: 5751627 (1998-05-01), Ooishi
patent: 5768176 (1998-06-01), Katoh

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