Ferroelectric memory with diode isolation

Static information storage and retrieval – Systems using particular element – Ferroelectric

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365175, 36523006, G11C 1122

Patent

active

050635395

ABSTRACT:
An improved ferroelectric, non-volatile memory comprises an array of ferroelectric capacitors with each capacitor connected to one row and one column select line through a network of diodes. The select lines are connected to a power supply or ground to access one of the cells. The diodes are configured to provide a conducting path between a power supply and ground including the accessed cell while isolating all other cells from the power supply and ground.

REFERENCES:
patent: 2876436 (1959-03-01), Anderson
patent: 2918655 (1959-12-01), Pulvari
patent: 3196405 (1965-07-01), Gunn
patent: 3260996 (1966-07-01), Muller
patent: 3355723 (1967-11-01), Clark
patent: 3585611 (1971-06-01), Lefkowitz et al.
patent: 3728694 (1973-04-01), Rohrer
patent: 3911464 (1975-10-01), Chang et al.
patent: 3939292 (1976-02-01), Rohrer
patent: 3990057 (1976-11-01), Kumada
patent: 4068217 (1978-01-01), Arnett et al.
patent: 4099237 (1978-07-01), Mikada et al.
patent: 4161038 (1979-07-01), Wu
patent: 4169258 (1979-09-01), Tannas, Jr.
patent: 4195355 (1980-03-01), Rohrer
patent: 4488262 (1984-12-01), Basire et al.
patent: 4707897 (1987-11-01), Rohrer et al.
patent: 4713157 (1987-12-01), McMillan et al.
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 4873664 (1989-10-01), Eaton, Jr.
"The Research Status and Device Potential of Ferroelectric Thin Films"; M. H. Francombe; PA; 1971.
"Ferroelectric Radiation-Hardness for NonVolatile Memory Applications" Krysalis Corp. Technical Rpt.; 11/87; Albuquerque, NM.
"NonVolatile Ferroelectric Technology & Products"; Ramtron Inter. Technical Rpt.; 10/87; Colorado.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Ferroelectric memory with diode isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric memory with diode isolation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory with diode isolation will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-503682

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.