Ferroelectric memory using pair of reference cells

Details Ferroelectric memory using pair of reference cells Ferroelectric memory using pair of reference cells

1996-06-13

1997-09-02

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365210, G11C 1122

Patent

active

056639040

ABSTRACT:
A ferroelectric memory comprised of a word line; a read bit line; a plate line; a memory array comprised of a matrix arrangement of memory cells with gate electrodes connected to the word line, one of the source-drain electrodes connected to the read bit line, the other of the source-drain electrodes connected to one of the electrodes of a ferroelectric capacitor, and the other of the electrodes of the ferroelectric capacitor connected to the plate line; a first reference cell and a second reference cell corresponding to each of the read cells in a word line selected at the time of reading data, read out in comparison with each other, and storing data different in value from each other; a first sense amplifier for comparing and amplifying a difference in potential between the read bit line and a first reference bit line to which the first reference cell is connected for each read bit line to which a read cell is connected; and a second sense amplifier for comparing and amplifying a difference in potential between the read bit line and a second reference bit line to which the second reference cell is connected.

REFERENCES:
patent: 5010518 (1991-04-01), Toda
patent: 5455786 (1995-10-01), Takeuchi
patent: 5517445 (1996-05-01), Imai

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