Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1997-09-02
1998-12-08
Nelms, David
Static information storage and retrieval
Systems using particular element
Ferroelectric
365210, G11C 1122
Patent
active
058479899
ABSTRACT:
A random access memory circuit uses single ferroelectric memory cells to store data. The ferroelectric memory cells can be selectively read using a reference voltage which is compared to a voltage representative of data stored on the memory cell using a multiplexed sense amplifier. The reference voltage is generated using a non-remnant capacitor circuit coupled to a bit line. In using a non-remnant capacitor circuit, a single-ended reference voltage can be generated on the bit line. The capacitance of the bit line is substantially greater than the capacitance of the non-remnant capacitor, therefore, the resultant reference voltage on the bit line remains relatively constant with fluctuations in supply voltage. A ferroelectric memory cell can then be read by comparing the voltage on its corresponding bit line to the reference voltage using the sense amplifier.
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Ho Hoai V.
Micro)n Technology, Inc.
Nelms David
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