Ferroelectric memory used for the RFID system, method for drivin

Static information storage and retrieval – Systems using particular element – Ferroelectric

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Details

365149, 365210, G11C 1122

Patent

active

060976225

ABSTRACT:
A ferroelectric memory having a memory cell array or a plurality of memory cell arrays, word lines, where each memory cell array includes word lines. The memory also includes a plurality of plate lines, where each memory cell array includes some of the plate lines and the word line corresponds with some of the plate lines, a bit line, a word line select circuit for selecting among the word lines, and plurality of plate line select circuits, where each of the plate line select circuit is coupled to an associated plate line.

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patent: 5487032 (1996-01-01), Mihara et al.
patent: 5517445 (1996-05-01), Imai et al.
patent: 5608667 (1997-03-01), Osawa
patent: 5629888 (1997-05-01), Saito et al.

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