Ferroelectric memory transistor with resistively coupled floatin

Details Ferroelectric memory transistor with resistively coupled floatin Ferroelectric memory transistor with resistively coupled floatin

1997-09-15

2000-05-30

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257315, 257324, 257379, 257380, H01L 2976, H01L 2988, H01L 2992, H01L 2994

Patent

active

060693819

ABSTRACT:
The present invention proposes a new type of single-transistor memory device, which stores information using the polarization of a ferroelectric material. The device is a floating-gate FET, with a ferroelectric material positioned between the gate and the floating gate, and a resistance, preferably in the form of a thin SiO.sub.2 dielectric between the floating gate and the transistor channel. Unlike previous designs, in this device the floating gate is both capacitively and resistively coupled to the transistor channel, which enables the device to be both read and written using low voltages. This device offers significant advantages for operation at low voltages and at high speeds, for repeated cycling of over 10.sup.10 times, since device durability is limited by the ferroelectric endurance rather than oxide breakdown, and for integration at gigabit densities.

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