Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-05
2007-06-05
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S324000, C257S411000, C257SE29272
Reexamination Certificate
active
10960219
ABSTRACT:
A method for fabricating a non-volatile memory device. The method includes providing a substrate, e.g., silicon. The method also includes forming an oxide layer overlying the substrate; and forming a buffer layer overlying the oxide layer. A ferroelectric material is formed overlying the substrate and is formed preferably overlying the buffer layer. The method also includes forming a gate layer overlying the ferroelectric material, where the gate layer is overlying a channel region. The method further includes forming first source/drain region adjacent to a first side of the channel region and a second source/drain region adjacent to a second side of the channel region. In other embodiments, the method can also include other steps.
REFERENCES:
patent: 5955755 (1999-09-01), Hirai et al.
Hynix / Semiconductor Inc.
Pizarro Marcos D.
Townsend and Townsend / and Crew LLP
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