Ferroelectric memory supplying predetermined amount of...

Details Ferroelectric memory supplying predetermined amount of... Ferroelectric memory supplying predetermined amount of...

2005-04-19

2005-04-19

Le, Thong Q. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189040

Reexamination Certificate

active

06882559

ABSTRACT:
Upon reading data from a memory cell, first and second bit lines are precharged beforehand at a grounding voltage. Then, at a start of the reading, a predetermined amount of direct-current bias electricity is supplied to the first and second bit lines for a predetermined period of time by a direct-current bias electricity supply circuit. Thereafter, a sense amplifier is activated.

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