Ferroelectric memory structure and fabrication method thereof

Details Ferroelectric memory structure and fabrication method thereof Ferroelectric memory structure and fabrication method thereof

2006-03-21

2006-03-21

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S310000

Reexamination Certificate

active

07015523

ABSTRACT:
A ferroelectric memory structure is disclosed. The ferroelectric memory structure includes a substrate, an insulating layer formed on the substrate, a plurality of oxide electrodes formed on the insulating layer, a ferroelectric layer formed on the insulating layer and the plurality of oxide electrodes, and a plurality of metallic electrodes formed on the ferroelectric layer and corresponding to the plurality of the oxide electrodes.

REFERENCES:
patent: 6285577 (2001-09-01), Nakamura
patent: 6449185 (2002-09-01), Kato et al.
patent: 2004/0099893 (2004-05-01), Martin et al.

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