Ferroelectric memory structure

Details Ferroelectric memory structure Ferroelectric memory structure

1992-04-02

1999-07-20

Lane, Jack A.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365177, 3652256, G11C 1122

Patent

active

059264128

ABSTRACT:
Architectures for a ferroelectric memory which avoids the half select phenomenon and the problems associated with destructive readout. Non-destructive readout is provided by measuring current through the ferroelectric memory as a measure of its resistance. Information is stored in the ferroelectric memory element by altering its resistance through a polarizing voltage. The half select phenomenon is avoided by using isolation techniques. In various embodiments, zener diodes or bipolar junction transistors are used for isolation.

REFERENCES:
patent: 2773250 (1956-12-01), Aigrain et al.
patent: 2876436 (1959-03-01), Anderson
patent: 3585611 (1971-06-01), Lefkowitz et al.
patent: 3728694 (1973-04-01), Rohrer
patent: 3859642 (1975-01-01), Mar
patent: 3939292 (1976-02-01), Rohrer
patent: 4195355 (1980-03-01), Rohrer
patent: 4707897 (1987-11-01), Rohrer et al.
patent: 4713157 (1987-12-01), McMillan et al.
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 4817051 (1989-03-01), Chang
patent: 4858183 (1989-08-01), Scharrer et al.
patent: 4860254 (1989-08-01), Pott et al.
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4888630 (1989-12-01), Paterson
patent: 4933899 (1990-06-01), Gibbs
patent: 5070385 (1991-12-01), Evans, Jr. et al.
patent: 5119329 (1992-06-01), Evans, Jr.
Parker et al, "Ferroelectric Materials for 64Mb and 256Mb DRAMs", IEEE Circuits & Devices, vol. 6, No. 1, Jan. 1990, pp. 17-26.
Fridkin, V. M., "Ferroelectric Semiconductors", Consultants Bureau, New York and London, 1980, pp. 299-303.
"Preparation of Pb (Zr,Ti)O.sub.3 thin films by sol gel processing"; J. Appl. Phys. 64 (5); Sep. 1, 1988.

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