Ferroelectric memory sensing method using distinct read and writ

Details Ferroelectric memory sensing method using distinct read and writ Ferroelectric memory sensing method using distinct read and writ

1995-03-29

1996-07-02

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122

Patent

active

055329535

ABSTRACT:
A method of operating a nonvolatile ferroelectric memory cell including a polarized ferroelectric capacitor includes the steps of reading and restoring a first polarization state of the ferroelectric capacitor at a voltage not sufficient to fully saturate the ferroelectric capacitor, but sufficient to release a detectable amount of charge corresponding to the first polarization state. Writing a second polarization state in the ferroelectric capacitor is performed at a voltage sufficient to fully saturate the ferroelectric capacitor. During a read and restore operation, the plate line of the memory cell is pulsed with first and second voltage pulses that each have a voltage magnitude less than the normal five volt logic pulse, for example four volts. During a write operation, the plate line of the memory cell is pulsed with a voltage that has a magnitude greater than the normal five volt logic pulse, for example six to seven volts.

REFERENCES:
patent: 5270967 (1993-12-01), Moazzami et al.
patent: 5309391 (1994-05-01), Papaliolios

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