Ferroelectric memory, multivalent data recording method and...

Details Ferroelectric memory, multivalent data recording method and... Ferroelectric memory, multivalent data recording method and...

2005-09-08

2008-12-16

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000, C257SE27104

Reexamination Certificate

active

07465980

ABSTRACT:
A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.

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Taiwanese Office Action dated Feb. 26, 2008.

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