Ferroelectric memory having pair of reference cells

Details Ferroelectric memory having pair of reference cells Ferroelectric memory having pair of reference cells

1996-10-22

1998-05-19

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122, G11C 1124

Patent

active

057544662

ABSTRACT:
A ferroelectric memory which can ensure a sufficient operational margin at the time of a read operation, includes a transmission transistor and a ferroelectric capacitor which are connected in series between a bit line and a plate electrode. Composite data of a pair of reference cells storing reverse data with each other and data of a read cell are compared before reading out data of a memory cell.

REFERENCES:
patent: 5381364 (1995-01-01), Chern et al.
patent: 5392234 (1995-02-01), Hirano et al.
patent: 5572459 (1996-11-01), Wilson et al.
patent: 5574679 (1996-11-01), Ohtsuki et al.
patent: 5617349 (1997-04-01), Koike
patent: 5621680 (1997-04-01), Newman et al.
Tatsumi Sumi et al., "A 256kb Nonvolatile Ferroelectric Memory at 3V and 100ns", 1994 IEEE International Solid-State Circuits Conference, 1994, pp. 268-269.

Affiliated with

Also associated with

Rating

Ferroelectric memory having pair of reference cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric memory having pair of reference cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory having pair of reference cells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1859828