Ferroelectric memory having a hydrogen barrier film which...

Details Ferroelectric memory having a hydrogen barrier film which... Ferroelectric memory having a hydrogen barrier film which...

2005-12-06

2005-12-06

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S303000, C257S306000, C257S324000, C438S003000, C438S240000

Reexamination Certificate

active

06972449

ABSTRACT:
A first insulating hydrogen barrier film is filled between lower electrodes of some ferroelectric capacitors arranged along one direction out of a word line direction and a bit line direction among a plurality of ferroelectric capacitors included in a ferroelectric memory of this invention. A common capacitor dielectric film commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the lower electrodes of the some ferroelectric capacitors arranged along the one direction and on the first insulating hydrogen barrier film. A common upper electrode commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the common capacitor dielectric film. A second insulating hydrogen barrier film is formed so as to cover the common upper electrode.

REFERENCES:
patent: 6180971 (2001-01-01), Maejima
patent: 6188098 (2001-02-01), Amanuma
patent: 6441420 (2002-08-01), Nagano et al.
patent: 6455327 (2002-09-01), Maejima
patent: 6611014 (2003-08-01), Kanaya et al.
patent: 2001/0006239 (2001-07-01), Yang et al.
patent: 2001/0006241 (2001-07-01), Yang
patent: 11-135736 (1999-05-01), None
patent: 11-163288 (1999-06-01), None

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