Ferroelectric memory having a common plate electrode

Details Ferroelectric memory having a common plate electrode Ferroelectric memory having a common plate electrode

1998-04-13

1999-10-05

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

257295, 257296, G11C 1122, H01L 2976

Patent

active

059634669

ABSTRACT:
A memory for storing a plurality of words of data. The memory is constructed from one or more storage blocks. Each storage block includes a plurality of storage words, each storage word storing one of the words of data. Each storage word includes a plurality of single bit storage cells. The single bit storage cells include a ferroelectric capacitor and a pass transistor having a gate, source, and drain. The ferroelectric capacitor includes a bottom electrode, a layer of ferroelectric material, and a top electrode, the layer of ferroelectric material being sandwiched between the top and bottom electrodes. One bit of data is stored in the direction of polarization of the ferroelectric material in contact with the bottom electrode. The bottom electrode is connected to the source of the pass transistor. The top electrode of each single bit storage cell is part of a continuous conducting layer covering all of the ferroelectric capacitors in the storage block. Similarly, the ferroelectric layer is part of a continuous layer of ferroelectric material that is shared by all of the ferroelectric capacitors in the storage block.

REFERENCES:
patent: 5010518 (1991-04-01), Toda
patent: 5300799 (1994-04-01), Nakamura et al.
patent: 5716875 (1998-02-01), Jones, Jr. et al.

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