Ferroelectric memory element and method for manufacturing...

Details Ferroelectric memory element and method for manufacturing... Ferroelectric memory element and method for manufacturing...

2005-03-23

2008-12-02

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S751000

Reexamination Certificate

active

07459738

ABSTRACT:
A ferroelectric memory element has a memory cell array including memory cells arranged in a matrix configuration, each of the memory cells having a lower electrode, an upper electrode arranged in a direction intersecting the lower electrode, and a ferroelectric layer disposed at least in an intersecting area between the upper electrode and the lower electrode, wherein a hydrogen barrier film and a hydrogen barrier film are arranged at least below the memory cell array, and a bottom hydrogen barrier film is arranged below the memory cell array.

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