Ferroelectric memory devices with partitioned platelines

Details Ferroelectric memory devices with partitioned platelines Ferroelectric memory devices with partitioned platelines

2011-04-05

2011-04-05

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S117000, C365S148000, C365S149000, C365S230060

Reexamination Certificate

active

07920404

ABSTRACT:
One embodiment relates to a ferroelectric memory device. The ferroelectric memory device includes a segment of contiguous ferroelectric memory cells arranged in rows and columns. A row of ferroelectric memory cells includes a common wordline that allows access to the memory cells of the row and also includes at least two platelines associated with the row. At least one of the at least two platelines is associated with adjacent columns of ferroelectric memory cells within the row. The row of ferroelectric memory cells includes another word line which is not associated with the at least two platelines. Other methods and systems are also disclosed.

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