Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-12-25
2007-12-25
Mai, Son L. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S149000
Reexamination Certificate
active
11491872
ABSTRACT:
Ferroelectric memory devices include a ferroelectric memory cell. The ferroelectric memory cell has at least one bit line and a plate line. A control circuit drives the at least one bit line with write data substantially concurrently with activation of the plate line during a write operation. The memory devices may also include a sense amplifier coupled to the ferroelectric memory cell and the control circuit may be further configured to deactivate the plate line substantially concurrently with activation of the sense amplifier during a read operation.
REFERENCES:
patent: 5198994 (1993-03-01), Natori
patent: 5523964 (1996-06-01), McMillan et al.
patent: 5579258 (1996-11-01), Adachi
patent: 5592410 (1997-01-01), Verhaeghe et al.
patent: 5638318 (1997-06-01), Seyyedy
patent: 5815430 (1998-09-01), Verhaeghe et al.
patent: 5940316 (1999-08-01), Koike
patent: 5991188 (1999-11-01), Chung et al.
patent: 6091622 (2000-07-01), Kang
patent: 6091623 (2000-07-01), Kang
patent: 6128213 (2000-10-01), Kang
patent: 6288961 (2001-09-01), Tanaka et al.
patent: 6385078 (2002-05-01), Jeon
patent: 6483738 (2002-11-01), Kang et al.
patent: 6501674 (2002-12-01), Ashikaga
patent: 6566698 (2003-05-01), Nishihara et al.
patent: 6826099 (2004-11-01), Joachim et al.
patent: 2002/0057590 (2002-05-01), Kang et al.
patent: 198 46 264 (1999-06-01), None
patent: 199 15 075 (1999-10-01), None
Sheikholeslami et al. “A Survey of Circuit Innovations in Ferroelectric Random-Access Memories”Proceedings of the IEEE88 (5):667-689 (2000).
Tanaka et al. “FRAM Cell Design with High Immunity to Fatigue and Imprint for 05 μ 3 V 1t1C 1 Mbit FRAM”IEEE Transactions on Electron Devices47 (4):781-788 (2000).
Jeon Byung-Gil
Kim Ki-nam
Mai Son L.
Myers Bigel & Sibley & Sajovec
LandOfFree
Ferroelectric memory devices having a plate line control... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ferroelectric memory devices having a plate line control..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory devices having a plate line control... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3881973